​We don't do mass u-LED, we do power GaN.
 
Genesis photonics was founded on the outstanding epitaxy technology build by the co-founders ,and has insisted on extending the epitaxy tech to low-cost solutions for power components  , which is different from the SiC and silicon substrate solutions in the market. Our philosophy is to keep extending the possibility of GaN material, and not to do the mechanical moving job

Electricity demand is increasing across markets, with global demand for electricity projected to increase from 20,000 TWh today to 40,000 TWh in 2050.

 

At an industry level, the world's 8 million data centers account for 2-3% of global energy use, and this proportion is expected to rise to more than 5%. The energy consumption of industrial motors accounts for 30% and is still growing, and by 2040, electric vehicles will become a large part of global energy consumption, accounting for 7% of global energy consumption.

 

Gallium nitride material can reduce losses in all of these systems.

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GaN power device : ​Faster, Lighter,Smaller

 

Fom theoretical point of view, GaN offers fantastic technical advantages over traditional Si MOSFETs; the technology is very appealing, and more and more players are entering; moreover the lowering of prices could make GaN devices a good competitor of the currently used Si-based power switching transistors. 

Very low internal resistance, compared with similar silicon components, the efficiency can be increased by 70%.Low resistance can improve thermal performance (highest operating temperature) and heat dissipation, achieve higher power density. The heat dissipation is optimized.

Compared with similar silicon components, a simpler package can be used,the size and weight are greatly reduced. Very short turn-off time (GaN element is close to zero), can operate at very high switching frequency, and the operating temperature is also lower.

The fast charging applications of GaN in mobile devices and automotive DC/DC power conversion GaN field effect transistors and integrated circuits are very suitable for the in-vehicle drive power system of electric vehicles

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GaN EV power device , HFET,SBD

Gallium nitride (GaN), a wide band gap semiconductor, is also attracting attention in the electric vehicle market. The electrification of automobiles is disrupting the automobile industry. Consumers also want faster charging and longer battery life. Therefore, engineers must design smaller and lighter vehicle-mounted systems. Industrial and automotive applications increasingly require larger power supplies in smaller spaces.

Gallium nitride components have the advantages of high conversion efficiency, small size, etc., can achieve greater energy-saving benefits in high-power applications, and can operate in a higher temperature environment; suitable for in-vehicle electronic conversion applications between 400V~800V.Realize GaN on a sapphire substrate with a specific technology up to 1600V

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Non SiC substrate , but same performance  is expected 
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GaN supply industry chain

Gallium nitride wide bandgap power devices are important materials for the design and division of third-generation semiconductors and SiC semiconductors. Unlike in optoelectronics, where GaN is grown on silicon substrates, a six- or eight-inch semiconductor fabrication process plant is used to fabricate FET devices and combine them with the ensuing field of packaging. Industrial systems are designed based on upstream ICs and are commissioned to manufacture foundry or IDM systems. The semiconductor industry belongs to giants, as seen in recent mergers and acquisitions of startups in factories in Europe and the United States.

 

However, it is impossible to mass-produce and clamp SiC substrates, and due to the limitation of high-voltage materials of GaN-on-Si, it is estimated that by 2030, if 10 million vehicles use high-voltage components, 5 million 6" silicon carbide-based components will be required. material supply challenges, but also provides opportunities for new startups.

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